Tianjing’s 12-inch sapphire substrate is mass-produced to meet MicroLED manufacturing needs

According to Projection Times, Jiangsu Tianjing Intelligent Equipment Co., Ltd. (hereinafter referred to as "Tianjing Intelligent Equipment") announced that its independently developed 12-inch sapphire substrate and carrier wafer have simultaneously achieved large-scale mass production, with an annual production capacity of 100,000 pieces and a yield rate of over 97%.

The diameter control accuracy of the mass-produced 12-inch sapphire substrate is 300±0.5mm, the surface roughness is 0.2nm, the dislocation density is ≤500 cm?2, and it can withstand high temperatures of 2050°C, meeting the manufacturing needs of high-end devices such as GaN epitaxy and Micro LED.

The 12-inch sapphire substrate uses original ultra-high-speed diamond wire cutting technology (line speed 3000 meters/minute) and magnetron sputtering process to reduce the dislocation density of the epitaxial layer of the product by 80%, improving the luminous efficiency of the LED chip.

Image source: Tianjing Intelligent Equipment

According to data, Tianjing Intelligent Equipment was founded in Shenzhen in 2015 and has focused on the field of intelligent equipment since the beginning. In 2019, the company established its production headquarters in Xuzhou. In 2024, in order to expand its scale, the factory moved to Huai'an. In the same year, it established a branch in Shuitou Town, Fujian, completing its national layout. (Compiled by LEDinside)

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