Shanghai Xianyao Display applies for patents for micro-LED, micro-LED array panels and their manufacturing methods

The patent abstract shows that a micro An LED, including: a first type semiconductor layer; a first type capping layer formed on the first type semiconductor layer; and a light emitting layer formed on the first type capping layer; wherein the first type semiconductor layer includes a mesa structure, a trench, and an ion implantation fence separated from the mesa structure; the ion implantation fence is formed around the trench, and the trench is formed around the mesa structure; wherein the resistance of the first ion implantation fence is higher than the resistance of the first mesa structure.