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Key breakthrough in the post-Moore era: Hanhua Semiconductor opens up the full-process process of silicon-based Micro-LED and CMOS, and the 8-inch full-color MLED silicon light integration platform

Suzhou Hanhua Semiconductor Co., Ltd. (hereinafter referred to as "Hanhua") based on 8-inch silicon-based gallium nitride full-color LED epitaxial technology, combined with self-developed wafer-level lossless silicon removal process, has successfully built the country's first Micro-LED standard process mass production platform that is highly compatible with 8-inch CMOS semiconductor process, and has officially opened foundry and joint development services to industry partners. The successful verification of this platform marks the systematic opening of the full-process process link of "GaN epitaxy → lossless silicon removal → thin film integration → CMOS process → microdisplay device", laying the foundation for mass production technology for next-generation human-computer interaction scenarios such as ultra-high-resolution AR/VR near-eye displays, MLED optical interconnection, spatial computing, digital car lights, and AI power management.

Facing the future, near-eye display is expected to become the most portable terminal form after smartphones and computers, driving the trillion-level market to explode. Micro-LED, as its core display technology, is accelerating towards large-scale commercialization.

1. Technical highlights: How to break key barriers?

1.8-inch full-color GaN-on-silicon epitaxial platform

Based on 8-inch (200 mm) gallium nitride on silicon (GaN-on-Si) epitaxial technology, Hanhua has completed the construction of a process platform for red, blue, green and other multi-wavelength light-emitting structures, opening up key process nodes in the full-color technology path. Through wafer-level stress control and defect engineering, epitaxial uniformity and yield suitable for mass production are achieved, providing a stable foundation for subsequent lossless silicon removal and film transfer.

2. Mature loss-free De-Si Platform (Damage-free De-Si Platform)

Hanhua has established a wafer-level loss-free de-Si technology suitable for 8-inch silicon wafers to achieve controlled peeling of the silicon substrate and maintain the integrity and optoelectronic performance of the gallium nitride film over a large area. Compared with traditional wafer or local lift-off solutions, this process supports array-oriented thin-film-level transfer and is more suitable for wafer-level alignment bonding or packaging integration with CMOS backplanes. It effectively solves the long-term problem that restricts the deep coupling of GaN-on-Si and advanced CMOS processes.

3. Integrated architecture highly compatible with 8-inch CMOS process

The platform fully benchmarks the mainstream 8-inch CMOS process line in terms of process window and material system, covering key indicators such as temperature budget, metal system, flatness and stress control, and can achieve collaborative manufacturing or back-end integration with existing CMOS production lines. The platform supports a variety of integration methods, including wafer-level bonding of GaN thin films or light-emitting arrays to CMOS driver wafers, as well as local interconnection and packaging solutions that are compatible with back-end processes. Through process specifications and interface definitions similar to PDK (Process Design Kit), Hanhua provides partners with standardized interfaces for layout design, device structure, and process parameters, significantly accelerating the entire process from design to tape-out.

4. Micron-level or even nano-level light-emitting units and high-density arrays

On this platform, Hanhua has realized a micron-level or even sub-micron-level light-emitting unit array structure, which can meet the needs of ultra-high PPI Micro-LED micro-displays. The platform provides configurable capabilities in terms of pixel size, pixel pitch, array topology, etc. It can not only support single-color high-brightness applications, but also reserves sufficient space for full-color or mixed-light optical architectures. Combined with the scale and cost advantages brought by 8-inch wafer manufacturing, it provides a scalable device foundation for large-scale near-eye display applications.

5. System-level adaptation for near-eye display

From the beginning of the design, the process platform targets near-eye display scenarios such as AR, VR, and MR, and presets optimization space in key indicators such as brightness, uniformity, contrast, and power consumption. In the future, we can work with optical module manufacturers and machine manufacturers to optimize the light output structure, color scheme and system-level packaging to achieve system-level solutions for terminal applications.

2. Micro-LED standard process platform and open foundry model

In order to promote industry collaborative innovation and accelerate application implementation, Hanhua officially released the "8-inch Gallium Nitride on Silicon Micro-LED standard process platform" based on this technological breakthrough, and opened the following capabilities to partners:

1. Standard process platform (similar to PDK system)

Provides a standard process module library based on 8-inch GaN on silicon, including epitaxial structure selection, pixel unit structure, array layout rules, metal interconnection and bonding windows, etc. Open design rule files (DRC/LVS rules), layout templates and key simulation parameters to partners, supporting seamless integration with existing CMOS design processes. Flexible process combinations and route suggestions are provided for different application scenarios such as single color or full color, near-eye or direct display, single chip or hybrid integration.

2. Wafer-level foundry and joint development

Accept partners’ customized tape-out and foundry services on this platform, covering foundry on GaN-on-Si, one-stop delivery from epitaxy to silicon removal to CMOS integration, as well as joint development for specific applications (including device structure, array design, circuit collaboration, etc.). Support a phased cooperation model from prototype verification, small batch trial production to gradual large-scale production.

3. Industrial cooperation and ecological co-construction

Based on this platform, Hanhua will open cooperation in the following directions:

Work with CMOS foundries to build GaN-on-Si + lossless silicon removal + back-end integration process for 8-inch lines to form a joint process platform;

Jointly develop high-brightness, high-PPI products for AR/VR/MR, vehicle HUD, industrial headsets and other scenarios with display panel, optical module, and complete machine manufacturers. Micro-LED microdisplay solution;

Work with material and equipment suppliers to optimize epitaxial material systems, silicon removal equipment and bonding processes to continue to improve yield and cost competitiveness.

3. Follow-up planning and phased goals

Based on the verification of the existing platform, Hanhua will continue to promote:

Evolve towards higher PPI and smaller pixel size, and explore the feasibility of nano-scale light-emitting unit arrays in mass production processes;

Enrich full-color implementation paths, combine multi-wavelength epitaxy and color conversion solutions, and gradually form a standard process combination for full-color Micro-LED devices;

Promote joint verification with more CMOS foundries and system customers to build an integrated "design-process-packaging-system" solution that can be replicated at scale.

Close-up display has moved from concept to reality; the trillion-dollar market began with today’s changes in technology. Hanhua Semiconductor sincerely invites industry partners to join hands to create a new era of human-computer interaction.

Introduction to Hanhua Semiconductor

Hanhua Semiconductor is the global leader in heterogeneous 3D integration technology and has the only "GaN Plus 3DIC" full-process process platform in China. Since 2017, the company has made strategic forward-looking plans in the three major directions of heterogeneous integration, new displays, and commercial aerospace, which is deeply in line with the "15th Five-Year Plan" national strategy. With compound semiconductor materials as the core engine - materials are the foundation of chip performance, only by mastering materials can we define the upper limit of performance - through 3DIC heterogeneous technology, we can break down the barriers between different material systems of compound semiconductors and integrated circuits, and build a core base leading to the ultimate integration of chips in the post-Moore era and the AI ​​era. As an open semiconductor foundry platform with a complete PDK, Hanhua provides core chip solutions for cutting-edge scenarios such as near-eye display, human-computer interaction, AI power management, commercial aerospace, and quantum computing to help accelerate the implementation of next-generation intelligent systems.


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Contact: Mack

Phone: +8613352972563

E-mail: mack@archled.net

Add: Building A2, Mingjinhai Second Industrial Zone, Shiyan Street, Baoan, Shenzhen,Guangdong,China

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