According to information from the Tianyancha App, Mil Optical Semiconductor (Beijing) Co., Ltd. has recently completed key industrial and commercial changes, adding new shareholders such as Huawei's Shenzhen Hubble Technology Investment Partnership (Limited Partnership) and Suzhou Future Technology Enterprise Service Partnership (Limited Partnership). The registered capital has increased from approximately 5.155 million yuan to approximately 5.514 million yuan. This change coincided with its angel round financing, marking the official entry of leading technology industry capital into the core track of indium phosphide high-speed optical chips.
Image source: Paixin.com
Mir Opto Semiconductor was established in May 2021, and its legal representative is Yang Zhanyu. It is a hard technology company focusing on the R&D and production of indium phosphide (InP)-based high-speed optical chips. The company's core product is a single carrier photodetector, which is mainly used in 800G/1.6T high-speed optical modules, 6G all-photon wireless base stations, lidar/millimeter wave radar fusion and other scenarios. It also adapts to the high-speed interconnection needs of AI data centers. It is a key component supplier for the next generation of "photonics fusion" communication technology.
This round of financing is jointly participated by Xinke Capital (a subsidiary of China Xinke Group), Yuanhe Holdings, Huawei and Hubble and other industry parties. The funds will be mainly used for indium phosphide optical chip R&D iteration, core team expansion and small-volume production line construction to accelerate the implementation of 6G all-photon wireless technology and high-speed optical interconnection products.
Currently, the construction of global AI computing power clusters and intelligent computing centers continues to accelerate, and the demand for 800G/1.6T high-speed optical modules has exploded, while indium phosphide-based high-speed optical chips have long been monopolized by overseas manufacturers. The indium phosphide material that Millight is deeply involved in belongs to the second generation semiconductor. It has irreplaceable performance advantages in the high-frequency and optoelectronic fields. It is the core substrate material for 6G communications and high-speed optical modules. (Source: TrendForce Compound Semiconductor)
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