Tianyancha APP shows that recently, the patent for "a structure to increase the brightness of LED chips" applied by Jucan Optoelectronics Technology Co., Ltd. was announced.
The abstract shows that the present invention discloses a structure for improving the brightness of an LED chip, relates to the field of LED chips, and particularly relates to a technical solution that enhances light extraction efficiency and reduces light loss by gridding an optical isolation layer and combining it with the gridded optical isolation layer through DBR. The structure includes: a quantum well layer in the LED chip; a transparent conductive layer and an optical isolation layer located above the quantum well layer; a distributed Bragg reflector located on the optical isolation layer; among them, the optical isolation layer is gridded to form a regular grating structure to reduce light absorption; the reflection area is increased through the combination of the grid structure and DBR. Compared with the existing structure, the present invention achieves effective suppression of light absorption and improvement of light reflection efficiency.

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