Jiangxi Yaochi applied for a patent for Mini-LED chips and their preparation methods to improve the light efficiency of Mini-LED chips

The patent abstract shows that the present invention discloses a MiniLED chip and a preparation method thereof, and relates to the field of semiconductor optoelectronic devices. The preparation method includes the following steps: S1, provide an epitaxial wafer, which includes a plurality of preset areas; S2, form a bonding layer; S3, bond with the second substrate; S4, form a first through hole; the first through hole is set away from the edge of the preset area, and its sidewall is inclined; S5, form a first contact layer; the first contact layer covers the bottom of the first through hole and the sidewall of the preset length, It only forms ohmic contact with the P-type semiconductor layer; S6, forms a second contact layer to obtain an intermediate; S7, forms a DBR layer on the intermediate, and etches to form the second through hole and the third through hole in the area where the first contact layer and the second contact layer are located; S8, forms the N electrode and the P electrode to obtain the LED wafer; S9, cuts the LED wafer to obtain MiniLED chip. Implementing the present invention can improve the light efficiency of MiniLED chips.